Design of Process Variation 3T1D-Based DRAM Using CADENCE
نویسندگان
چکیده
[email protected] [email protected] Abstract— This Paper Deals With the Design and Analysis of 3T1D DRAM Cell to develop Process Variation Architectures using Cadence Tool. With continued technology scaling, process variations will be especially Detrimental to Threetransistor One Diode Dynamic memory structures (3T1D DRAM). A Memory architecture using three-transistor, onediode DRAM (3T1D) cells Using Cadence tool wide process variations with Different Technology 0.6um ami, 0.40um tsmc, and 0.30um tsmc performance , making it a promising choice for 3T1D Cell on-chip cache structures for Next-generation microprocessors. Process variation is mainly caused by fluctuations in dopant concentrations and device channel dimensions. The Performance 3T1D DRAM Cells after Process variation is simulated in cadence for Effective Performance for NanoScale technology.
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